J. Phys. Soc. Jpn. 89, 055003 (2020) [2 Pages]
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SHORT NOTES

Large Magnetoresistance and Dirac Line Node in LaAgBi2

Masayuki Murase, and Takao Sasagawa
+ Affiliations
Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama 226-8503, Japan
Received August 12, 2019; Accepted March 30, 2020; Published April 17, 2020

We succeeded in growing high quality single crystals of LaAgBi2, which was evidenced by the values of the residual resistivity and the residual resistivity ratio. Compared with the previous report, magnetoresistance at 2 K and 9 T doubled to 2400%. First-principles calculations revealed that LaAgBi2 had nonsymmorphic symmetry-protected “massless” Dirac nodal-line dispersions across the Fermi energy, suggesting an important contribution to the observed large magnetoresistance.

©2020 The Physical Society of Japan
https://doi.org/10.7566/JPSJ.89.055003

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