J. Phys. Soc. Jpn. 91, 045003 (2022) [2 Pages]
SHORT NOTES

Persistent Spin–Orbit Mott Insulating State in Highly Compressed Post-Perovskite CaIrO3

+ Affiliations
1Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan2Department of Earth and Planetary Sciences, Tokyo Institute of Technology, Meguro, Tokyo 152-8551, Japan3KYOKUGEN, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

Electronic properties of CaIrO3 with the post-perovskite structure were investigated under experimental conditions of pressure up to 180 GPa. By measuring the electrical resistivity under high pressure, we found that the Mott insulating state is robust up to 180 GPa. Extrapolation of the activation energy indicated suppression of the charge gap at 200 GPa. Furthermore, we found that the antiferromagnetic transition temperature marginally increases by applying a pressure of up to 9.3 GPa.

©2022 The Physical Society of Japan

References

  • 1 M. Imada, A. Fujimori, and Y. Tokura, Rev. Mod. Phys. 70, 1039 (1998). 10.1103/RevModPhys.70.1039 CrossrefGoogle Scholar
  • 2 B. J. Kim, H. Jin, S. J. Moon, J.-Y. Kim, B.-G. Park, C. S. Leem, J. Yu, T. W. Noh, C. Kim, S.-J. Oh, J.-H. Park, V. Durairaj, G. Cao, and E. Rotenberg, Phys. Rev. Lett. 101, 076402 (2008). 10.1103/PhysRevLett.101.076402 CrossrefGoogle Scholar
  • 3 B. J. Kim, H. Ohsumi, T. Komesu, S. Sakai, T. Morita, H. Takagi, and T. Arima, Science 323, 1329 (2009). 10.1126/science.1167106 CrossrefGoogle Scholar
  • 4 Y. Ding, L. Yang, C.-C. Chen, H.-S. Kim, M. J. Han, W. Luo, Z. Feng, M. Upton, D. Casa, J. Kim, T. Gog, Z. Zeng, G. Cao, H. K. Mao, and M. van Veenendaal, Phys. Rev. Lett. 116, 216402 (2016). 10.1103/PhysRevLett.116.216402 CrossrefGoogle Scholar
  • 5 H. Okabe, N. Takeshita, M. Isobe, E. Takayama-Muromachi, T. Muranaka, and J. Akimitsu, Phys. Rev. B 84, 115127 (2011). 10.1103/PhysRevB.84.115127 CrossrefGoogle Scholar
  • 6 D. Orii, M. Sakata, A. Miyake, K. Shimizu, H. Okabe, M. Isobe, E. Takayama-Muromachi, and J. Akimitsu, J. Korean Phys. Soc. 63, 349 (2013). 10.3938/jkps.63.349 CrossrefGoogle Scholar
  • 7 M. Murakami, K. Hirose, K. Kawamura, N. Sata, and Y. Ohishi, Science 304, 855 (2004). 10.1126/science.1095932 CrossrefGoogle Scholar
  • 8 A. R. Oganov and S. Ono, Nature (London) 430, 445 (2004). 10.1038/nature02701 CrossrefGoogle Scholar
  • 9 T. Tsuchiya, J. Tsuchiya, K. Umemoto, and R. M. Wentzcovitch, Earth Planet. Sci. Lett. 224, 241 (2004). 10.1016/j.epsl.2004.05.017 CrossrefGoogle Scholar
  • 10 M. Moretti Sala, K. Ohgushi, A. Al-Zein, Y. Hirata, G. Monaco, and M. Krisch, Phys. Rev. Lett. 112, 176402 (2014). 10.1103/PhysRevLett.112.176402 CrossrefGoogle Scholar
  • 11 S.-W. Kim, C. Liu, H.-J. Kim, J.-H. Lee, Y. Yao, K.-M. Ho, and J.-H. Cho, Phys. Rev. Lett. 115, 096401 (2015). 10.1103/PhysRevLett.115.096401 CrossrefGoogle Scholar
  • 12 K. Ohgushi, H. Gotou, T. Yagi, Y. Kiuchi, F. Sakai, and Y. Ueda, Phys. Rev. B 74, 241104(R) (2006). 10.1103/PhysRevB.74.241104 CrossrefGoogle Scholar
  • 13 K. Ohgushi, J. Yamaura, H. Ohsumi, K. Sugimoto, S. Takeshita, A. Tokuda, H. Takagi, M. Tanaka, and T. Arima, Phys. Rev. Lett. 110, 217212 (2013). 10.1103/PhysRevLett.110.217212 CrossrefGoogle Scholar
  • 14 G. Giriat, W. Wang, J. P. Attfield, A. D. Huxley, and K. V. Kamenev, Rev. Sci. Instrum. 81, 073905 (2010). 10.1063/1.3465311 CrossrefGoogle Scholar
  • 15 Y. Akahama and H. Kawamura, J. Appl. Phys. 96, 3748 (2004). 10.1063/1.1778482 CrossrefGoogle Scholar
  • 16 G. J. Piermarini, S. Block, J. D. Barnett, and R. A. Forman, J. Appl. Phys. 46, 2774 (1975). 10.1063/1.321957 CrossrefGoogle Scholar
  • 17 T. Tsuchiya and J. Tsuchiya, Phys. Rev. B 76, 144119 (2007). 10.1103/PhysRevB.76.144119 CrossrefGoogle Scholar
  • 18 C. Chen, Y. Zhou, X. Chen, T. Han, C. An, Y. Zhou, Y. Yuan, B. Zhang, S. Wang, R. Zhang, L. Zhang, C. Zhang, Z. Yang, L. E. DeLong, and G. Cao, Phys. Rev. B 101, 144102 (2020). 10.1103/PhysRevB.101.144102 CrossrefGoogle Scholar
  • 19 Y. Tokura, K. Kikuchi, T. Arima, and S. Uchida, Phys. Rev. B 45, 7580(R) (1992). 10.1103/PhysRevB.45.7580 CrossrefGoogle Scholar
  • 20 K. Momma and F. Izumi, J. Appl. Crystallogr. 44, 1272 (2011). 10.1107/S0021889811038970 CrossrefGoogle Scholar