JPS Conf. Proc. 3, 012009 (2014) [6 pages]
Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013)
Effect of Magnetic Field on Resistivity of CePtSi2 Single Crystal
1Graduate school of Science and Technology, Niigata University, Niigata 950-2181, Japan
2Faculty of Engineering, Niigata University, Niigata 950-2181, Japan
Received October 20, 2013

We measured the electrical resistivity of a single crystal of pressure-induced superconductor CePtSi2 in a magnetic field. Electrical resistivities with excitation current parallel to the orthorhombic a-, b-, and c-axis drastically decrease with increasing magnetic field parallel to the c-axis. The antiferromagnetic transition temperature TN of 1.8 K at 0 T disappears above Bc ~ 4.5 T. On the other hand, the electrical resistivities show smaller decrease for magnetic field parallel to the a- and b-axis. Furthermore, TN slightly decreases for B||a-axis and is almost independent of B||b-axis.

©2014 The Physical Society of Japan

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